(In,Er)2O3 Alloys and Photoluminescence of Er3+ at Indirect Excitation via the Crystalline Host

Kalusniak S, Orphal L, Schaefer P, Kuznetsov AS, Benson O, Sadofev S (2019)

Publication Type: Journal article

Publication year: 2019

Journal

physica status solidi (b) Wiley

Book Volume: 256

Article Number: 1800243

Journal Issue: 3

DOI: 10.1002/pssb.201800243

Abstract

(In1−xErx)2O3 ternary alloys are grown on A-plane sapphire wafers by plasma-assisted molecular beam epitaxy. The layers crystallize in the cubic bixbyite structure with 111 axis aligned parallel to the substrate normal. The d-spacing of the {111} lattice planes linearly increases with increasing the Er molar fraction in accordance with Vegard's law. Incorporation of Er in the In2O3 matrix is accompanied by the widening of the optical gap and linear increase of the peak absorption coefficient reaching 380 cm−1 at the telecommunication wavelength of 1.54 µm. The samples exhibit Er3+-related emission at indirect excitation via the crystalline host at room temperature.

Involved external institutions

Humboldt-Universität zu Berlin DE Germany (DE)

How to cite

APA:

Kalusniak, S., Orphal, L., Schaefer, P., Kuznetsov, A.S., Benson, O., & Sadofev, S. (2019). (In,Er)2O3 Alloys and Photoluminescence of Er3+ at Indirect Excitation via the Crystalline Host. physica status solidi (b), 256(3). https://doi.org/10.1002/pssb.201800243

MLA:

Kalusniak, Sascha, et al. "(In,Er)2O3 Alloys and Photoluminescence of Er3+ at Indirect Excitation via the Crystalline Host." physica status solidi (b) 256.3 (2019).

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