Tuning exciton recombination rates in doped transition metal dichalcogenides
Kuechle T, Klimmer S, Lapteva M, Hamzayev T, George A, Turchanin A, Fritz T, Ronning C, Gruenewald M, Soavi G (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 12
Article Number: 100097
DOI: 10.1016/j.omx.2021.100097
Abstract
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton–exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.
Involved external institutions
Germany (DE)How to cite
APA:
Kuechle, T., Klimmer, S., Lapteva, M., Hamzayev, T., George, A., Turchanin, A.,... Soavi, G. (2021). Tuning exciton recombination rates in doped transition metal dichalcogenides. Optical Materials: X, 12. https://doi.org/10.1016/j.omx.2021.100097
MLA:
Kuechle, Theresa, et al. "Tuning exciton recombination rates in doped transition metal dichalcogenides." Optical Materials: X 12 (2021).
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