Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

Mei H, Koch A, Wan C, Rensberg J, Zhang Z, Salman J, Hafermann M, Schaal M, Xiao Y, Wambold R, Ramanathan S, Ronning C, Kats MA (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Nanophotonics De Gruyter Open

Book Volume: 11

Pages Range: 3923-3932

Journal Issue: 17

DOI: 10.1515/nanoph-2022-0050

Abstract

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide (ZnO) and vanadium dioxide (VO2) as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a wide-bandgap semiconductor, ZnO, achieving carrier concentrations from 1018 cm-3 to 1020 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, VO2, locally modifying its insulator-to-metal transition (IMT) temperature by up to ∼25 °C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.

Involved external institutions

University of Wisconsin - Madison US United States (USA) (US) Friedrich-Schiller-Universität Jena DE Germany (DE) Purdue-University US United States (USA) (US)

How to cite

APA:

Mei, H., Koch, A., Wan, C., Rensberg, J., Zhang, Z., Salman, J.,... Kats, M.A. (2022). Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams. Nanophotonics, 11(17), 3923-3932. https://doi.org/10.1515/nanoph-2022-0050

MLA:

Mei, Hongyan, et al. "Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams." Nanophotonics 11.17 (2022): 3923-3932.

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