Fe implantation induced lattice defects and their recovery in GaN

Bharuth-Ram K, Naidoo D, Adoons , Ronning C (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Hyperfine Interactions Springer Verlag (Germany)

Book Volume: 243

Article Number: 2

Journal Issue: 1

DOI: 10.1007/s10751-021-01785-9

Abstract

A GaN thin film grown on sapphire substrate was implanted with 57Fe and 56Fe ions with energies of 60 keV, 160 keV and 370 keV and fluences selected to achieve a homogeneous concentration profile of approximately 2.6 at. % in the film. Implantation induced lattice damage was tracked with conversion electron Mössbauer spectroscopy (CEMS) after annealing the sample up to 900 °C. The spectral component due to Fe in lattice damage shows significant decrease on annealing above 700 °C, accompanied by a corresponding increase in the paramagnetic doublet component attributed to Fe substituting Ga in the wurtzite GaN lattice (FeGa). After annealing at 900 °C, FeGa accounts for 75% of the spectral area, in good agreement with the substitutional FeGa fraction (80%) observed in emission channeling measurements on Fe implanted into GaN at extremely dilute concentration.

Involved external institutions

University of KwaZulu-Natal (UKZN) ZA South Africa (ZA) University of the Witwatersrand (WITS) ZA South Africa (ZA) Durban University of Technology (DUT) ZA South Africa (ZA)

How to cite

APA:

Bharuth-Ram, K., Naidoo, D., Adoons, ., & Ronning, C. (2022). Fe implantation induced lattice defects and their recovery in GaN. Hyperfine Interactions, 243(1). https://dx.doi.org/10.1007/s10751-021-01785-9

MLA:

Bharuth-Ram, K., et al. "Fe implantation induced lattice defects and their recovery in GaN." Hyperfine Interactions 243.1 (2022).

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