Hilpert F, Liao PC, Franz E, Koch V, Fromm L, Topraksal E, Görling A, Smith AS, Barr M, Bachmann J, Brummel O, Libuda J (2023)
Publication Type: Journal article
Publication year: 2023
Pages Range: 19536–19544
Solution-based atomic layer deposition (sALD) processes enable the preparation of thin films on nanostructured surfaces while controlling the film thickness down to a monolayer and preserving the homogeneity of the film. In sALD, a similar operation principle as in gas-phase ALD is used, however, with a broader range of accessible materials and without requiring expensive vacuum equipment. In this work, a sALD process was developed to prepare CuSCN on a Si substrate using the precursors CuOAc and LiSCN. The film growth was studied by ex situ atomic force microscopy (AFM), analyzed by a neural network (NN) approach, ellipsometry, and a newly developed in situ infrared (IR) spectroscopy experiment in combination with density functional theory (DFT). In the self-limiting sALD process, CuSCN grows on top of an initially formed two-dimensional (2D) layer as three-dimensional spherical nanoparticles with an average size of ∼25 nm and a narrow particle size distribution. With increasing cycle number, the particle density increases and larger particles form via Ostwald ripening and coalescence. The film grows preferentially in the β-CuSCN phase. Additionally, a small fraction of the α-CuSCN phase and defect sites form.
APA:
Hilpert, F., Liao, P.-C., Franz, E., Koch, V., Fromm, L., Topraksal, E.,... Libuda, J. (2023). Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods. ACS Applied Materials and Interfaces, 19536–19544. https://doi.org/10.1021/acsami.2c16943
MLA:
Hilpert, Felix, et al. "Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods." ACS Applied Materials and Interfaces (2023): 19536–19544.
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