Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies

Nicolas L, Delord T, Huillery P, Neu E, Hetet G (2018)

Publication Type: Journal article

Publication year: 2018

Journal

AIP Advances AIP Publishing

Book Volume: 8

Article Number: 065102

Journal Issue: 6

DOI: 10.1063/1.5035484

Abstract

Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) exhibits a narrow photoluminescence (PL) line and lifetime-limited linewidth in a bulk at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.

Involved external institutions

University of Paris 7 - Denis Diderot / Université Paris VII Denis Diderot FR France (FR) Universität des Saarlandes (UdS) DE Germany (DE)

How to cite

APA:

Nicolas, L., Delord, T., Huillery, P., Neu, E., & Hetet, G. (2018). Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies. AIP Advances, 8(6). https://dx.doi.org/10.1063/1.5035484

MLA:

Nicolas, L., et al. "Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies." AIP Advances 8.6 (2018).

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