Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks

Schnitzspan L, Cramer J, Kubik J, Tarequzzaman M, Jakob G, Klaui M (2020)

Publication Type: Journal article

Publication year: 2020

Journal

IEEE Magnetics Letters Institute of Electrical and Electronics Engineers

Book Volume: 11

Article Number: 9127880

DOI: 10.1109/LMAG.2020.3005381

Abstract

The effect of annealing temperatures on the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) has been investigated for annealing between 190 and 370°C. The TMR shows a maximum value of 215% at an annealing temperature of 330°C. A strong sensitivity of the TMR and the exchange bias of the pinned ferromagnetic layers on the annealing temperature are observed. Depending on sensor application requirements, the MTJ can be optimized either for stability and pinning strength or for a high TMR signal by choosing the appropriate annealing temperature. The switching mechanism of the ferromagnetic layers in the MTJ and the influence of the annealing on the layer properties, including the MgO barrier, are discussed.

Involved external institutions

Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE) Analog Devices IE Ireland (IE)

How to cite

APA:

Schnitzspan, L., Cramer, J., Kubik, J., Tarequzzaman, M., Jakob, G., & Klaui, M. (2020). Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks. IEEE Magnetics Letters, 11. https://doi.org/10.1109/LMAG.2020.3005381

MLA:

Schnitzspan, Leo, et al. "Impact of Annealing Temperature on Tunneling Magnetoresistance Multilayer Stacks." IEEE Magnetics Letters 11 (2020).

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