Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Zhou X, Zhang RW, Zhang Z, Feng W, Mokrousov Y, Yao Y (2021)

Publication Type: Journal article

Publication year: 2021

Journal

npj Computational Materials Nature Research

Book Volume: 7

Article Number: 160

Journal Issue: 1

DOI: 10.1038/s41524-021-00632-3

Abstract

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.

Involved external institutions

Beijing Institute of Technology (BIT) / 北京理工大学 CN China (CN) Beijing University of Chemical Technology CN China (CN) Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE)

How to cite

APA:

Zhou, X., Zhang, R.-W., Zhang, Z., Feng, W., Mokrousov, Y., & Yao, Y. (2021). Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors. npj Computational Materials, 7(1). https://doi.org/10.1038/s41524-021-00632-3

MLA:

Zhou, Xiaodong, et al. "Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors." npj Computational Materials 7.1 (2021).

BibTeX: Download