Barra A, Ross A, Gomonay O, Baldrati L, Chavez A, Lebrun R, Schneider JD, Shirazi P, Wang Q, Sinova J, Carman GP, Klaeui M (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 118
Article Number: 172408
Journal Issue: 17
DOI: 10.1063/5.0046255
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray fields as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Néel vector orientation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Second, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnet's magnetic state.
APA:
Barra, A., Ross, A., Gomonay, O., Baldrati, L., Chavez, A., Lebrun, R.,... Klaeui, M. (2021). Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO. Applied Physics Letters, 118(17). https://doi.org/10.1063/5.0046255
MLA:
Barra, A., et al. "Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO." Applied Physics Letters 118.17 (2021).
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