Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene
Braatz ML, Veith L, Koester J, Kaiser U, Binder A, Gradhand M, Klaeui M (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 5
Article Number: 084003
Journal Issue: 8
DOI: 10.1103/PhysRevMaterials.5.084003
Abstract
The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene.
Involved external institutions
Johannes Gutenberg-Universität Mainz (JGU)
Germany (DE)
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research
Germany (DE)
Universität Ulm
Germany (DE)
BASF SE
Germany (DE)
Germany (DE)
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research
Germany (DE)
Universität Ulm
Germany (DE)
BASF SE
Germany (DE)
How to cite
APA:
Braatz, M.-L., Veith, L., Koester, J., Kaiser, U., Binder, A., Gradhand, M., & Klaeui, M. (2021). Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene. Physical Review Materials, 5(8). https://doi.org/10.1103/PhysRevMaterials.5.084003
MLA:
Braatz, Marie-Luise, et al. "Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene." Physical Review Materials 5.8 (2021).
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