Single-source precursor-based deposition of Sb2Te3 films by MOCVD

Bendt G, Schulz S, Zastrow S, Nielsch K (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Chemical Vapor Deposition Wiley-VCH Verlag

Book Volume: 19

Pages Range: 235-241

Journal Issue: 7-9

DOI: 10.1002/cvde.201207044

Abstract

The low-temperature metal-organic (MO)CVD of Sb2Te3 films is achieved by the use of the single-source precursor (Et2Sb)2Te, 1. The role of the substrate temperature on the deposition rate and the composition of the resulting film is described. The resulting Sb2Te3 films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Auger spectroscopies. Moreover, the Seebeck coefficient of the Sb2Te3 film deposited at 200 °C is determined, and the value of 160µVK-1 demonstrates the high quality and low carrier density of the film.

Involved external institutions

Universität Duisburg-Essen (UDE) DE Germany (DE) Universität Hamburg (UHH) DE Germany (DE)

How to cite

APA:

Bendt, G., Schulz, S., Zastrow, S., & Nielsch, K. (2013). Single-source precursor-based deposition of Sb2Te3 films by MOCVD. Chemical Vapor Deposition, 19(7-9), 235-241. https://doi.org/10.1002/cvde.201207044

MLA:

Bendt, Georg, et al. "Single-source precursor-based deposition of Sb2Te3 films by MOCVD." Chemical Vapor Deposition 19.7-9 (2013): 235-241.

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