Topological phase transition in bulk materials described by the coherent potential approximation technique

Chadov S, Kiss J, Kuebler J, Felser C (2013)


Publication Type: Journal article

Publication year: 2013

Journal

Book Volume: 7

Pages Range: 82-89

Journal Issue: 1-2

DOI: 10.1002/pssr.201206395

Abstract

We consider the analogy between the topological phase transition which occurs on a surface of a non-trivial insulator as a function of spatial coordinate, and the phase transition occurring in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of a topological phase transition, independent of the type of the driving parameters. In particular, this leads to a simple way of determining the topological class - based solely on the bulk information - even for systems where the translational symmetry is broken by atomic disorder or by strong electron correlations. Here we demonstrate this idea, using as an example the zinc-blende related semiconductors by means of ab-initio fully-relativistic band structure calculations, involving the technique of coherent potential approximation (CPA). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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How to cite

APA:

Chadov, S., Kiss, J., Kuebler, J., & Felser, C. (2013). Topological phase transition in bulk materials described by the coherent potential approximation technique. Physica Status Solidi-Rapid Research Letters, 7(1-2), 82-89. https://doi.org/10.1002/pssr.201206395

MLA:

Chadov, Stanislav, et al. "Topological phase transition in bulk materials described by the coherent potential approximation technique." Physica Status Solidi-Rapid Research Letters 7.1-2 (2013): 82-89.

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