Bandgap engineering of CdxZn1-xTe nanowires

Davami K, Pohl J, Shaygan M, Kheirabi N, Faryabi H, Cuniberti G, Lee JS, Meyyappan M (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Nanoscale Royal Society of Chemistry

Book Volume: 5

Pages Range: 932-935

Journal Issue: 3

DOI: 10.1039/c2nr33284a

Abstract

Bandgap engineering of single-crystalline alloy CdxZn 1-xTe (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1-xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications. © 2013 The Royal Society of Chemistry.

Involved external institutions

Pohang University of Science and Technology (POSTECH)

Korea, Republic of (KR) Technische Universität Dresden

Germany (DE) National Aeronautics and Space Administration (NASA)

United States (USA) (US)

How to cite

APA:

Davami, K., Pohl, J., Shaygan, M., Kheirabi, N., Faryabi, H., Cuniberti, G.,... Meyyappan, M. (2013). Bandgap engineering of CdxZn1-xTe nanowires. Nanoscale, 5(3), 932-935. https://dx.doi.org/10.1039/c2nr33284a

MLA:

Davami, Keivan, et al. "Bandgap engineering of CdxZn1-xTe nanowires." Nanoscale 5.3 (2013): 932-935.

BibTeX: Download