Is MoS2 a robust material for 2D electronics?

Lorenz T, Ghorbani-Asl M, Joswig JO, Heine T, Seifert G (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Book Volume: 25

Article Number: 445201

Journal Issue: 44

DOI: 10.1088/0957-4484/25/44/445201

Abstract

A nanoindentation computer experiment has been carried out by means of Born-Oppenheimer molecular-dynamics simulations employing the density-functional based tight-binding method. A free-standing MoS2 sheet, fixed at a circular support, was indented by a stiff, sharp tip. During this process, the strain on the nanolayer is locally different, with maximum values in the vicinity of the tip. All studied electronic properties - the band gap, the projected density of states, the atomic charges and the quantum conductance through the layer - vary only slightly before they change significantly when the MoS2 sheet finally is pierced. After strong local deformation due to the indentation process, the electronic conductance in our model still is 80% of its original value. Thus, the electronic structure of single-layer MoS2 is rather robust upon local deformation.

Involved external institutions

Technische Universität Dresden DE Germany (DE) Jacobs University Bremen gGmbH DE Germany (DE)

How to cite

APA:

Lorenz, T., Ghorbani-Asl, M., Joswig, J.-O., Heine, T., & Seifert, G. (2014). Is MoS2 a robust material for 2D electronics? Nanotechnology, 25(44). https://doi.org/10.1088/0957-4484/25/44/445201

MLA:

Lorenz, Tommy, et al. "Is MoS2 a robust material for 2D electronics?" Nanotechnology 25.44 (2014).

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