Tuning the polarity of charge transport in InSb nanowires via heat treatment
Hnida KE, Baessler S, Akinsinde L, Gooth J, Nielsch K, Socha RP, Laszcz A, Czerwinski A, Sulka GD (2015)
Publication Type: Journal article
Publication year: 2015
Journal
Book Volume: 26
Article Number: 285701
Journal Issue: 28
DOI: 10.1088/0957-4484/26/28/285701
Abstract
InSb nanowire (NW) arrays were prepared by pulsed electrodeposition combined with a porous template technique. The resulting polycrystalline material has a stoichiometric composition (In:Sb = 1:1) and a high length-to-diameter ratio. Based on a combination of Fourier transform infrared spectroscopy (FTIR) analysis and field-effect measurements, the band gap, the charge carrier polarity, the carrier concentration, the mobility and the effective mass for the InSb NWs was investigated. In this preliminary work, a transition from p-type to n-type charge transport was observed when the InSb NWs were subjected to annealing.
Involved external institutions
Jagiellonian University / Uniwersytet Jagielloński (UJ)
Poland (PL)
Universität Hamburg (UHH)
Germany (DE)
Polska Akademia Nauk (PAN) / Polish Academy of Sciences
Poland (PL)
Poland (PL)
Universität Hamburg (UHH)
Germany (DE)
Polska Akademia Nauk (PAN) / Polish Academy of Sciences
Poland (PL)
How to cite
APA:
Hnida, K.E., Baessler, S., Akinsinde, L., Gooth, J., Nielsch, K., Socha, R.P.,... Sulka, G.D. (2015). Tuning the polarity of charge transport in InSb nanowires via heat treatment. Nanotechnology, 26(28). https://doi.org/10.1088/0957-4484/26/28/285701
MLA:
Hnida, Katarzyna E., et al. "Tuning the polarity of charge transport in InSb nanowires via heat treatment." Nanotechnology 26.28 (2015).
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