Electronic properties of transition-metal dichalcogenides

Kuc A, Heine T, Kis A (2015)

Publication Type: Journal article

Publication year: 2015

Journal

Mrs Bulletin Cambridge University Press (CUP)

Book Volume: 40

Pages Range: 577-584

Journal Issue: 7

DOI: 10.1557/mrs.2015.143

Abstract

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are an example of other materials that are now vying for the attention of the materials research community. In this article, the current state of quantum-theoretical calculations of the electronic and mechanical properties of semiconducting TMDC materials are presented. In particular, the intriguing interplay between external parameters (electric field, strain) and band structure, as well as the basic properties of heterostructures formed by vertical stacking of different 2D TMDCs are reviewed. Electrical measurements of MoS2, WS2, and WSe2 and their heterostructures, starting from simple field-effect transistors to more demanding logic circuits, high-frequency transistors, and memory devices, are also presented.

Involved external institutions

Jacobs University Bremen gGmbH

Germany (DE) École Polytechnique Fédérale de Lausanne (EPFL)

Switzerland (CH)

How to cite

APA:

Kuc, A., Heine, T., & Kis, A. (2015). Electronic properties of transition-metal dichalcogenides. Mrs Bulletin, 40(7), 577-584. https://doi.org/10.1557/mrs.2015.143

MLA:

Kuc, Agnieszka, Thomas Heine, and Andras Kis. "Electronic properties of transition-metal dichalcogenides." Mrs Bulletin 40.7 (2015): 577-584.

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