Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

Mirhosseini H, Kiss J, Roma G, Felser C (2016)

Publication Type: Journal article

Publication year: 2016

Journal

Thin Solid Films Elsevier

Book Volume: 606

Pages Range: 143-147

DOI: 10.1016/j.tsf.2016.03.053

Abstract

We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (1120)/Mo(110) interface. The MoSe2 (1120)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (1120)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na atom occupies a Mo atom site in MoSe2 films.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) Johannes Gutenberg-Universität Mainz (JGU) DE Germany (DE)

How to cite

APA:

Mirhosseini, H., Kiss, J., Roma, G., & Felser, C. (2016). Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations. Thin Solid Films, 606, 143-147. https://doi.org/10.1016/j.tsf.2016.03.053

MLA:

Mirhosseini, Hossein, et al. "Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations." Thin Solid Films 606 (2016): 143-147.

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