A Single-Material Logical Junction Based on 2D Crystal PdS2

Ghorbani-Asl M, Kuc A, Miro P, Heine T (2016)


Publication Type: Journal article

Publication year: 2016

Journal

Book Volume: 28

Pages Range: 853-856

Journal Issue: 5

DOI: 10.1002/adma.201504274

Abstract

A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS2. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

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How to cite

APA:

Ghorbani-Asl, M., Kuc, A., Miro, P., & Heine, T. (2016). A Single-Material Logical Junction Based on 2D Crystal PdS2. Advanced Materials, 28(5), 853-856. https://doi.org/10.1002/adma.201504274

MLA:

Ghorbani-Asl, Mahdi, et al. "A Single-Material Logical Junction Based on 2D Crystal PdS2." Advanced Materials 28.5 (2016): 853-856.

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