Effect of compression on the electronic, optical and transport properties of MoS2/graphene-based junctions

Ghorbani-Asl M, Bristowe PD, Koziol K, Heine T, Kuc A (2016)

Publication Type: Journal article

Publication year: 2016

Journal

2D Materials IOP Science

Book Volume: 3

Article Number: 025018

Journal Issue: 2

DOI: 10.1088/2053-1583/3/2/025018

Abstract

Electronic, optical and transport properties of the MoS2/graphene heterostructure have been investigated as function of applied uniaxial compression normal to the interface plane using first principles calculations and a non-equilibrium Green's function approach. The results show that a small compressive load (∼1 GPa) can open up the band gap (∼12 meV), reduce the optical absorption coefficient (∼7%), redshift the absorption spectrum, and create non-Ohmic I-V characteristics that depend on the magnitude of applied bias. This suggests that graphene/MoS2 heterostructure can be suitable for electromechanical and photomechanical devices where the electronic, optical and transport properties can be tuned by an appropriate application of bias and mechanical deformations.

Involved external institutions

University of Cambridge GB United Kingdom (GB) Universität Bremen DE Germany (DE)

How to cite

APA:

Ghorbani-Asl, M., Bristowe, P.D., Koziol, K., Heine, T., & Kuc, A. (2016). Effect of compression on the electronic, optical and transport properties of MoS2/graphene-based junctions. 2D Materials, 3(2). https://doi.org/10.1088/2053-1583/3/2/025018

MLA:

Ghorbani-Asl, Mahdi, et al. "Effect of compression on the electronic, optical and transport properties of MoS2/graphene-based junctions." 2D Materials 3.2 (2016).

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