Improved Hole Injection into Perovskite Light-Emitting Diodes Using A Black Phosphorus Interlayer

Ricciardulli AG, Yang S, Kotadiya NB, Wetzelaer GJAH, Feng X, Blom PWM (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Advanced Electronic Materials Wiley

Book Volume: 5

Article Number: 1800687

Journal Issue: 2

DOI: 10.1002/aelm.201800687

Abstract

The light-output and efficiency of perovskite based light-emitting diodes (PeLEDs) is limited by hole injection and high leakage current, generated by a high hole injection barrier and poor perovskite morphology, respectively. Here, a feasible strategy is reported to overcome both constraints by introducing 2D black phosphorus (BP) as hole injection layer in the PeLED stack. A continuous film composed of high-quality, ultrathin, and large BP sheets on top of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate simultaneously improves the hole injection and morphology of the green-emitting inorganic CsPbBr3 perovskite. Inclusion of the BP enhances the external quantum efficiency of CsPbBr3 based PeLEDs from 0.7% to 2.8%.

Involved external institutions

Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research

Germany (DE) Technische Universität Dresden

Germany (DE)

How to cite

APA:

Ricciardulli, A.G., Yang, S., Kotadiya, N.B., Wetzelaer, G.-J.A.H., Feng, X., & Blom, P.W.M. (2019). Improved Hole Injection into Perovskite Light-Emitting Diodes Using A Black Phosphorus Interlayer. Advanced Electronic Materials, 5(2). https://doi.org/10.1002/aelm.201800687

MLA:

Ricciardulli, Antonio Gaetano, et al. "Improved Hole Injection into Perovskite Light-Emitting Diodes Using A Black Phosphorus Interlayer." Advanced Electronic Materials 5.2 (2019).

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