Electrical activity of geometrically necessary dislocations in polycrystalline silicon thin films prepared by solid phase crystallization
Ke C, Law F, Widenborg PI, Aberle AG, Peters IM (2014)
Publication Type: Journal article
Publication year: 2014
Journal
Book Volume: 211
Pages Range: 2488-2492
Journal Issue: 11
Abstract
We combine electron backscatter diffraction (EBSD) with the electron beam induced current (EBIC) technique, by carefully aligning the EBIC images with EBSD grain average misorientation (GAM) maps of selected polycrystalline thin-film regions to correlate intragrain misorientation with the film's electrical properties. Applying this method to large (>3 μm diameter) solid phase crystallization (SPC) poly-Si grains, we find that regions with low EBIC signals coincide with regions that have a high degree of misorientation. EBIC signals from the edge regions of these large grains are about 30% lower than those measured in their central regions. Combination of EBIC and GAM maps suggests that geometrically necessary dislocations (GNDs) are electrically active and present in the regions of the poly-Si grains with misorientations larger than 3° (whereby these regions are typically close to the grain boundaries). On the other hand, grains smaller than 3 μm show a homogenous spatial distribution of the electrical activity of defects. In addition, the electrical performance in the central regions of the large grains is better than that of the smaller grains. These observations suggest that the origins of the dominant recombination centres of the smaller grains are different from those of the larger grains.
Involved external institutions
Singapore (SG)How to cite
APA:
Ke, C., Law, F., Widenborg, P.I., Aberle, A.G., & Peters, I.M. (2014). Electrical activity of geometrically necessary dislocations in polycrystalline silicon thin films prepared by solid phase crystallization. physica status solidi (a), 211(11), 2488-2492. https://doi.org/10.1002/pssa.201431271
MLA:
Ke, Cangming, et al. "Electrical activity of geometrically necessary dislocations in polycrystalline silicon thin films prepared by solid phase crystallization." physica status solidi (a) 211.11 (2014): 2488-2492.
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