Unveiling the Hybrid n-Si/PEDOT:PSS Interface
Jaeckle S, Liebhaber M, Niederhausen J, Buechele M, Felix R, Wilks RG, Bär M, Lips K, Christiansen S (2016)
Publication Type: Journal article
Publication year: 2016
Journal
Book Volume: 8
Pages Range: 8841-8848
Journal Issue: 13
Abstract
We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), which is successfully applied as a hole selective contact in hybrid solar cells. We show that a post-treatment of the polymer films by immersion in a suitable solvent reduces the layer thickness by removal of excess material. We prove that this post-treatment does not affect the functionality of the hybrid solar cells. Through the thin layer we are probing the chemical structure at the n-Si/PEDOT:PSS interface with synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). From the HAXPES data we conclude that the Si substrate of a freshly prepared hybrid solar cell is already oxidized immediately after preparation. Moreover, we show that even when storing the sample in inert gas such as, e.g., nitrogen the n-Si/SiO
Authors with CRIS profile
Involved external institutions
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Jaeckle, S., Liebhaber, M., Niederhausen, J., Buechele, M., Felix, R., Wilks, R.G.,... Christiansen, S. (2016). Unveiling the Hybrid n-Si/PEDOT:PSS Interface. ACS Applied Materials and Interfaces, 8(13), 8841-8848. https://doi.org/10.1021/acsami.6b01596
MLA:
Jaeckle, Sara, et al. "Unveiling the Hybrid n-Si/PEDOT:PSS Interface." ACS Applied Materials and Interfaces 8.13 (2016): 8841-8848.
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