Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy
Munshi AM, Kim DC, Heimdal CP, Heilmann M, Christiansen SH, Vullum PE, Van Helvoort ATJ, Weman H (2018)
Publication Type: Journal article
Publication year: 2018
Journal
Book Volume: 113
Article Number: 263102
Journal Issue: 26
DOI: 10.1063/1.5052054
Abstract
Wide-bandgap group III-nitride semiconductors are of special interest for applications in ultraviolet light emitting diodes, photodetectors, and lasers. However, epitaxial growth of high-quality III-nitride semiconductors on conventional single-crystalline substrates is challenging due to the lattice mismatch and differences in the thermal expansion coefficients. Recently, it has been shown that graphene, a two-dimensional material, can be used as a substrate for growing high-quality III-V semiconductors via quasi-van der Waals epitaxy and overcome the named challenges. Here, we report selective area growth of AlGaN nanopyramids on hole mask patterned single-layer graphene using metal-organic vapor phase epitaxy. The nanopyramid bases have a hexagonal shape with a very high nucleation yield. After subsequent AlGaN/GaN/AlGaN overgrowth on the six 10 1 1 semi-polar side facets of the nanopyramids, intense room-temperature cathodoluminescence emission is observed at 365 nm with whispering gallery-like modes. This work opens up a route for achieving III-nitride opto-electronic devices on graphene substrates in the ultraviolet region for future applications.
Involved external institutions
CrayoNano AS
Norway (NO)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
SINTEF
Norway (NO)
NTNU Trondheim - Norwegian University of Science and Technology
Norway (NO)
Norway (NO)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
SINTEF
Norway (NO)
NTNU Trondheim - Norwegian University of Science and Technology
Norway (NO)
How to cite
APA:
Munshi, A.M., Kim, D.-C., Heimdal, C.P., Heilmann, M., Christiansen, S.H., Vullum, P.E.,... Weman, H. (2018). Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy. Applied Physics Letters, 113(26). https://doi.org/10.1063/1.5052054
MLA:
Munshi, A. Mazid, et al. "Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy." Applied Physics Letters 113.26 (2018).
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