Axial p–n Junctions in GaN Microrods
Tessarek C, Schechtel F, Heilmann M, Sarau G, Gust A, Klein T, Figge S, Christiansen S (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 256
Article Number: 1800452
Journal Issue: 4
Abstract
GaN microrods with an axial p–n junction are grown by metal-organic vapor phase epitaxy (MOVPE). Scanning electron microscopy in combination with cathodoluminescence measurements have been performed to visualize the microrod sections consisting of n- and p-type GaN and the p–n junction. Current–voltage measurements are carried out between different microrod sections to prove the successful formation of a p–n junction. Photovoltaic and photodetecting properties have been determined by illumination of the p–n junction with a UV laser. The shorter p-type sections in axial microrods and the presence of large diameter rods suggest a growth mode change from vertical to lateral growth during p-type deposition.
Involved external institutions
Universität Bremen
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
Germany (DE)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Germany (DE)
How to cite
APA:
Tessarek, C., Schechtel, F., Heilmann, M., Sarau, G., Gust, A., Klein, T.,... Christiansen, S. (2019). Axial p–n Junctions in GaN Microrods. physica status solidi (b), 256(4). https://doi.org/10.1002/pssb.201800452
MLA:
Tessarek, Christian, et al. "Axial p–n Junctions in GaN Microrods." physica status solidi (b) 256.4 (2019).
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