Switching Time Acceleration for High-Voltage CMOS RF Switch

Syroiezhin S, Oezdamar O, Weigel R, Solomko V (2022)

Publication Type: Conference contribution

Publication year: 2022

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 301-304

Conference Proceedings Title: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings

Event location: Milan IT

ISBN: 9781665484947

DOI: 10.1109/ESSCIRC55480.2022.9911368

Abstract

A high-voltage MOSFET-based RF switch with improved switching time is presented in this paper. The improvement is achieved by adding an auxiliary circuitry distributed along the stack which substantially speeds up the charging and discharging of gate oxide of the transistors. The auxiliary network is enabled by a delay-based control circuit defining acceleration time-window for switching transient. An RF switch comprising the proposed solution has been implemented in a dedicated 65 nm CMOS switch technology. The measured hardware demonstrates the improvement in switching time from 19.2\ \mu s to 1.6\ \mu s in OFF-to-ON direction and from 0.6\ \mu s to 0.2\ \mu s; in ON-to-OFF direction compared to the state-of-art implementation. The improvement is achieved at no penalty in key RF characteristics of the device. Particularly, both conventional and proposed switches are able to withstand up to 48 dBm RF power in OFF-state and demonstrate identical small- and large-signal response.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik (LTE)

Involved external institutions

eesy-ic GmbH DE Germany (DE) Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Syroiezhin, S., Oezdamar, O., Weigel, R., & Solomko, V. (2022). Switching Time Acceleration for High-Voltage CMOS RF Switch. In ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings (pp. 301-304). Milan, IT: Institute of Electrical and Electronics Engineers Inc..

MLA:

Syroiezhin, Semen, et al. "Switching Time Acceleration for High-Voltage CMOS RF Switch." Proceedings of the 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, Milan Institute of Electrical and Electronics Engineers Inc., 2022. 301-304.

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