GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection

Wanitzek M, Oehme M, Spieth C, Schwarz D, Seidel L, Schulze J (2022)

Publication Type: Conference contribution

Publication year: 2022

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 169-172

Conference Proceedings Title: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings

Event location: Milan, ITA

ISBN: 9781665484947

DOI: 10.1109/ESSCIRC55480.2022.9911363

Abstract

In this work, we report the growth, fabrication, and characterization of GeSn-on-Si Avalanche Photodiodes with a Sn concentration of up to 2.2%. The Ge1-xSnx absorption layer was grown at a very low temperature of 200°C by using molecular beam epitaxy. We show record low dark currents limited by a perimeter leakage path, only and therefore not influenced by the Sn concentration, while the absorption for a wavelength of 1,550 nm increases significantly.

Authors with CRIS profile

Jörg Schulze Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Wanitzek, M., Oehme, M., Spieth, C., Schwarz, D., Seidel, L., & Schulze, J. (2022). GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection. In ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings (pp. 169-172). Milan, ITA: Institute of Electrical and Electronics Engineers Inc..

MLA:

Wanitzek, Maurice, et al. "GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection." Proceedings of the 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022, Milan, ITA Institute of Electrical and Electronics Engineers Inc., 2022. 169-172.

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