Sb2Se3Thin-Film Growth by Solution Atomic Layer Deposition

Koch V, Charvot J, Cao Y, Hartmann C, Wilks RG, Kundrata I, Minguez Bacho I, Gheshlaghi N, Hoga F, Stubhan T, Alex W, Pokorný D, Topraksal E, Smith AS, Brabec C, Bär M, Guldi DM, Barr M, Bureš F, Bachmann J (2022)

Publication Type: Journal article

Publication year: 2022

Journal

Chemistry of Materials American Chemical Society

DOI: 10.1021/acs.chemmater.2c01550

Abstract

We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4″) substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2- precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid-solid interface between the precursors and the surface.

Authors with CRIS profile

Vanessa Koch Lehrstuhl für Chemistry of thin film materials Jaroslav Charvot Lehrstuhl für Chemistry of thin film materials Yuanyuan Cao Lehrstuhl für Chemistry of thin film materials Ivan Kundrata Lehrstuhl für Chemistry of thin film materials Ignacio Minguez Bacho Lehrstuhl für Chemistry of thin film materials Negar Gheshlaghi Lehrstuhl für Chemistry of thin film materials Wiebke Zika Lehrstuhl für Physikalische Chemie I Ece Topraksal Physics Underlying Life Science Ana-Suncana Smith Physics Underlying Life Science Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET) Marcus Bär Professur für Röntgenspektroskopie (HIERN) Dirk Michael Guldi Lehrstuhl für Physikalische Chemie I Maissa Barr Lehrstuhl für Chemistry of thin film materials Julien Bachmann Lehrstuhl für Chemistry of thin film materials

Involved external institutions

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE) University of Pardubice CZ Czech Republic (CZ)

How to cite

APA:

Koch, V., Charvot, J., Cao, Y., Hartmann, C., Wilks, R.G., Kundrata, I.,... Bachmann, J. (2022). Sb2Se3Thin-Film Growth by Solution Atomic Layer Deposition. Chemistry of Materials. https://doi.org/10.1021/acs.chemmater.2c01550

MLA:

Koch, Vanessa, et al. "Sb2Se3Thin-Film Growth by Solution Atomic Layer Deposition." Chemistry of Materials (2022).

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