Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration

Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H (2022)

Publication Type: Conference contribution, Abstract of a poster

Publication year: 2022

Event location: Berlin

Authors with CRIS profile

Saskia Schimmel Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Nagoya University / 名古屋大学 JP Japan (JP) Tohoku University JP Japan (JP)

How to cite

APA:

Schimmel, S., Tomida, D., Ishiguro, T., Honda, Y., Chichibu, S.F., & Amano, H. (2022). Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration. Poster presentation at International Workshop on Nitride Semiconductors, Berlin.

MLA:

Schimmel, Saskia, et al. "Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration." Presented at International Workshop on Nitride Semiconductors, Berlin 2022.

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