Atomic layer deposition of HfO 2 for integration into three-dimensional metal–insulator–metal devices

Assaud L, Pitzschel K, Barr MKS, Petit M, Monier G, Hanbucken M, Santinacci L (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Applied Physics A: Materials Science and Processing Springer Verlag (Germany)

Book Volume: 123

Article Number: 768

Journal Issue: 12

DOI: 10.1007/s00339-017-1379-2

Abstract

HfO 2 nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal–insulator–metal (MIM) devices. HfO 2 thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO 2 layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO 2 layers grown at low-temperature (T=150∘C) were amorphous, while for a higher temperature (T=250∘C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN / HfO 2/ TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures.

Authors with CRIS profile

Maissa Barr

Involved external institutions

Aix-Marseille University / Aix-Marseille Université

France (FR) University of Clermont Auvergne

France (FR)

How to cite

APA:

Assaud, L., Pitzschel, K., Barr, M.K.S., Petit, M., Monier, G., Hanbucken, M., & Santinacci, L. (2017). Atomic layer deposition of HfO 2 for integration into three-dimensional metal–insulator–metal devices. Applied Physics A: Materials Science and Processing, 123(12). https://doi.org/10.1007/s00339-017-1379-2

MLA:

Assaud, Loic, et al. "Atomic layer deposition of HfO 2 for integration into three-dimensional metal–insulator–metal devices." Applied Physics A: Materials Science and Processing 123.12 (2017).

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