Developing a robust recombination contact to realize monolithic perovskite tandems with industrially common p-type silicon solar cells

Hoye RLZ, Bush KA, Oviedo F, Sofia SE, Thway M, Li X, Liu Z, Jean J, Mailoa JP, Osherov A, Lin F, Palmstrom AF, Bulovic V, Mcgehee MD, Peters IM, Buonassisi T (2018)

Publication Type: Journal article

Publication year: 2018

Journal

IEEE Journal of Photovoltaics Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 8

Pages Range: 1023-1028

Journal Issue: 4

DOI: 10.1109/JPHOTOV.2018.2820509

Abstract

Although two-terminal perovskite-silicon tandem solar cells have rapidly increased in efficiency, they have only been demonstrated with n-type silicon, which currently constitutes less than 5% of the global photovoltaics market. In this paper, we realize the first two-terminal perovskite tandem with p-type silicon by developing a recombination contact that enables voltage addition without damaging either subcell. We find that silicon interband recombination contacts are limited by a SiOx charge-extraction barrier, which forms during oxidative top-cell fabrication. A sputtered 30-nm indium tin oxide layer is found to protect the silicon cell surface from oxidation, while forming a recombination contact with the p-type nickel oxide hole transport layer for the perovskite top cell. Using this recombination contact we achieve voltage addition between the perovskite top cell and aluminum back-surface field p-type silicon bottom cell. We also find that minimizing moisture on the nickel oxide surface is important for achieving a stable open-circuit voltage under illumination. The recombination contact developed herein could play an important role in near-future developments.

Involved external institutions

Stanford University US United States (USA) (US) National University of Singapore (NUS) SG Singapore (SG) University of Cambridge GB United Kingdom (GB) Massachusetts Institute of Technology (MIT) US United States (USA) (US)

How to cite

APA:

Hoye, R.L.Z., Bush, K.A., Oviedo, F., Sofia, S.E., Thway, M., Li, X.,... Buonassisi, T. (2018). Developing a robust recombination contact to realize monolithic perovskite tandems with industrially common p-type silicon solar cells. IEEE Journal of Photovoltaics, 8(4), 1023-1028. https://dx.doi.org/10.1109/JPHOTOV.2018.2820509

MLA:

Hoye, Robert L. Z., et al. "Developing a robust recombination contact to realize monolithic perovskite tandems with industrially common p-type silicon solar cells." IEEE Journal of Photovoltaics 8.4 (2018): 1023-1028.

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