Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography

Hayashi K, Lederer M, Fukumoto Y, Goto M, Yamamoto Y, Happo N, Harada M, Inamura Y, Oikawa K, Ohoyama K, Wellmann P (2022)


Publication Type: Journal article

Publication year: 2022

Journal

Book Volume: 120

Article Number: 132101

Journal Issue: 13

DOI: 10.1063/5.0080895

Abstract

The local structure around boron doped in 6H-type silicon carbide (SiC) was investigated using neutron holography. Three-dimensional atomic images reconstructed from multiple-wavelength holograms revealed the boron substitution for both silicon and carbon. To determine boron locations accurately, we calculated holograms with varying occupancies of six different sites and fit image intensities with those obtained from experimental holograms by the steepest descent method. As a result, it was found that boron atoms were selectively located at the Si-C-cubic site layer. Furthermore, boundaries right above the boron locations were suggested from the absence of atomic images in the upper region of reconstruction.

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APA:

Hayashi, K., Lederer, M., Fukumoto, Y., Goto, M., Yamamoto, Y., Happo, N.,... Wellmann, P. (2022). Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography. Applied Physics Letters, 120(13). https://doi.org/10.1063/5.0080895

MLA:

Hayashi, Kouichi, et al. "Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography." Applied Physics Letters 120.13 (2022).

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