Single-Layer Tl2O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility

Ma Y, Kuc A, Heine T (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Journal of the American Chemical Society American Chemical Society

Book Volume: 139

Pages Range: 11694-11697

Journal Issue: 34

DOI: 10.1021/jacs.7b06296

Abstract

The first metal-shrouded two-dimensional semiconductor, single-layer Tl2O, is discussed from first principles. It is thermally and dynamically stable, has a low cleavage energy calling for exfoliation from layered Tl2O bulk, and has a very small interface mismatch compared to (001) Tl metal. Single-layer Tl2O exhibits a direct bandgap of 1.56 eV and a very high charge carrier mobility of 4.3 × 103 cm2 V-1 s-1. The metal-shrouded 2D semiconductor promises interesting applications in 2D electronics. An intriguing layer-thickness-dependent direct-to-indirect bandgap transition is observed, and contrary to early literature, the bulk is also a semiconductor.

Involved external institutions

Universität Leipzig DE Germany (DE)

How to cite

APA:

Ma, Y., Kuc, A., & Heine, T. (2017). Single-Layer Tl2O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility. Journal of the American Chemical Society, 139(34), 11694-11697. https://doi.org/10.1021/jacs.7b06296

MLA:

Ma, Yandong, Agnieszka Kuc, and Thomas Heine. "Single-Layer Tl2O: A Metal-Shrouded 2D Semiconductor with High Electronic Mobility." Journal of the American Chemical Society 139.34 (2017): 11694-11697.

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