Pressure tuning of the electrical transport properties in the Weyl semimetal TaP
Besser M, Dos Reis RD, Fan FR, Ajeesh MO, Sun Y, Schmidt M, Felser C, Nicklas M (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 3
Article Number: 044201
Journal Issue: 4
DOI: 10.1103/PhysRevMaterials.3.044201
Abstract
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B?a and B?c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B?a contrary to the results for B?c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c direction.
Involved external institutions
Germany (DE)How to cite
APA:
Besser, M., Dos Reis, R.D., Fan, F.-R., Ajeesh, M.O., Sun, Y., Schmidt, M.,... Nicklas, M. (2019). Pressure tuning of the electrical transport properties in the Weyl semimetal TaP. Physical Review Materials, 3(4). https://doi.org/10.1103/PhysRevMaterials.3.044201
MLA:
Besser, M., et al. "Pressure tuning of the electrical transport properties in the Weyl semimetal TaP." Physical Review Materials 3.4 (2019).
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