Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped

Gaul C, Hutsch S, Schwarze M, Schellhammer KS, Bussolotti F, Kera S, Cuniberti G, Leo K, Ortmann F (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Nature Materials

Book Volume: 17

Pages Range: 439-444

Journal Issue: 5

DOI: 10.1038/s41563-018-0030-8

Abstract

Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C60 and zinc phthalocyanine n-doped with highly efficient benzimidazoline radicals (2-Cyc-DMBI). We study the role of doping-induced gap states, and, in particular, of the difference Δ 1 between the electron affinity of the undoped material and the ionization potential of its doped counterpart. We show that this parameter is critical for the generation of free carriers and influences the conductivity of the doped films. Tuning of Δ 1 may provide alternative strategies to optimize the electronic properties of organic semiconductors.

Involved external institutions

Technische Universität Dresden DE Germany (DE) National Institute of Natural Sciences (NINS) / 自然科学研究機構 JP Japan (JP)

How to cite

APA:

Gaul, C., Hutsch, S., Schwarze, M., Schellhammer, K.S., Bussolotti, F., Kera, S.,... Ortmann, F. (2018). Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped. Nature Materials, 17(5), 439-444. https://doi.org/10.1038/s41563-018-0030-8

MLA:

Gaul, Christopher, et al. "Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped." Nature Materials 17.5 (2018): 439-444.

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