Doping of graphene induced by boron/silicon substrate

Dianat A, Liao Z, Gall M, Zhang T, Gutierrez R, Zschech E, Cuniberti G (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Book Volume: 28

Article Number: 215701

Journal Issue: 21

DOI: 10.1088/1361-6528/aa6ce9

Abstract

In this work, we show the doping of graphene most likely from heteroatoms induced by the substrate using Raman spectra, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy and ab initio molecular dynamics (MD) simulations. The doping of graphene on a highly boron-doped silicon substrate was achieved by an annealing at 400 K for about 3 h in an oven with air flow. With the same annealing, only the Raman features similar to that from the pristine graphene were observed in the freestanding graphene and the graphene on a typical Si/SiO2 wafer. Ab initio MD simulations were performed for defected graphene on boron-doped silicon substrate at several temperatures. All vacancy sites in the graphene are occupied either with B atoms or Si atoms resulting in the mixed boron-silicon doping of the graphene. The MD simulations validated the experimetal finding of graphene doped behavior observed by Raman spectrum. The electronic structure analysis indicated the p-type nature of doped graphene. The observed doping by the possible incorporation of heteroatoms into the graphene, simply only using 400 K annealing the boron-doped Si substrate, could provide a new approach to synthesize doped graphene in a more economic way.

Involved external institutions

Technische Universität Dresden DE Germany (DE) Fraunhofer-Institut für Keramische Technologien und Systeme (IKTS) DE Germany (DE)

How to cite

APA:

Dianat, A., Liao, Z., Gall, M., Zhang, T., Gutierrez, R., Zschech, E., & Cuniberti, G. (2017). Doping of graphene induced by boron/silicon substrate. Nanotechnology, 28(21). https://dx.doi.org/10.1088/1361-6528/aa6ce9

MLA:

Dianat, Arezoo, et al. "Doping of graphene induced by boron/silicon substrate." Nanotechnology 28.21 (2017).

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