In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs
Jeon DY, Baldau T, Park SJ, Pregi S, Baraban L, Cuniberti G, Mikolajick T, Weber WM (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: Editions Frontieres
Pages Range: 304-307
Conference Proceedings Title: European Solid-State Device Research Conference
Event location: Leuven, BEL
ISBN: 9781509059782
DOI: 10.1109/ESSDERC.2017.8066652
Abstract
In this paper the operation mechanism of ambipolar Si-nanowire (Si-NW) Schottky-barrier (SB) FETs is discussed in detail using temperature dependent current-voltage (I-V) contour maps. Thermionic and field emission mechanism limited the overall conduction behavior of ambipolar Si-NW SB-FETs with considerable SB-height. However, Si-channel dominant transports with phonon scattering mechanism occur even in the SB based device at a specific bias condition, where charge carrier injection is saturated with a very thinned SB. Temperature dependent transconductance (g
Involved external institutions
Korea Institute of Science and Technology (KIST) / 한국과학기술연구원
Korea, Republic of (KR)
Technische Universität Dresden
Germany (DE)
Hochschule für Technik und Wirtschaft Dresden (HTW Dresden)
Germany (DE)
Korea, Republic of (KR)
Technische Universität Dresden
Germany (DE)
Hochschule für Technik und Wirtschaft Dresden (HTW Dresden)
Germany (DE)
How to cite
APA:
Jeon, D.Y., Baldau, T., Park, S.J., Pregi, S., Baraban, L., Cuniberti, G.,... Weber, W.M. (2017). In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs. In European Solid-State Device Research Conference (pp. 304-307). Leuven, BEL: Editions Frontieres.
MLA:
Jeon, Dae Young, et al. "In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs." Proceedings of the 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, BEL Editions Frontieres, 2017. 304-307.
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