Auger recombination and leakage in InGaN/GaN quantum well LEDs

Römer F, Witzigmann B, Deppner M, Range C (2014)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2014

Publisher: SPIE

Book Volume: 8986

Article Number: 89861R

Event location: San Francisco, CA

ISBN: 9780819498991

DOI: 10.1117/12.2037043

Authors with CRIS profile

Friedhard Römer Lehrstuhl für Optoelektronik Bernd Witzigmann Lehrstuhl für Optoelektronik

Involved external institutions

Universität Kassel DE Germany (DE)

How to cite

APA:

Römer, F., Witzigmann, B., Deppner, M., & Range, C. (2014). Auger recombination and leakage in InGaN/GaN quantum well LEDs. In Proceedings of the Gallium Nitride Materials and Devices IX. San Francisco, CA: SPIE.

MLA:

Römer, Friedhard, et al. "Auger recombination and leakage in InGaN/GaN quantum well LEDs." Proceedings of the Gallium Nitride Materials and Devices IX, San Francisco, CA SPIE, 2014.

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