How to choose the optimal gan-hemt for a hard switching application – a guide

Dobusch J, Schwanninger R, Kohlhepp B, Dürbaum T (2021)

Publication Type: Conference contribution

Publication year: 2021

Publisher: Mesago PCIM GmbH

Book Volume: 2021-May

Pages Range: 1511-1518

Conference Proceedings Title: PCIM Europe Conference Proceedings

Event location: Virtual, Online

ISBN: 9783800755158

Abstract

Modern GaN-HEMTs offer beneficial advantages over traditional Si-MOSFETs. GaN-HEMTs exhibit much lower stored charge (QOSS ) while providing identical conduction losses (RDS,On ). However, choosing the right switch is not straight forward and the non-linear relation of voltage and charge has to be taken into account. This paper presents a guide on how to select the right switch to minimize conduction and switching losses considering the crucial influence of all switches on the switching losses.

Authors with CRIS profile

Julian Dobusch Professur für Elektromagnetische Felder Raffael Schwanninger Lehrstuhl für Leistungselektronik (LEE) Benedikt Kohlhepp Professur für Elektromagnetische Felder Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Dobusch, J., Schwanninger, R., Kohlhepp, B., & Dürbaum, T. (2021). How to choose the optimal gan-hemt for a hard switching application – a guide. In PCIM Europe Conference Proceedings (pp. 1511-1518). Virtual, Online: Mesago PCIM GmbH.

MLA:

Dobusch, Julian, et al. "How to choose the optimal gan-hemt for a hard switching application – a guide." Proceedings of the 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021, Virtual, Online Mesago PCIM GmbH, 2021. 1511-1518.

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