Effect of Inhomogeneous Broadening in Deep Ultraviolet Light Emitting Diodes
Romer F, Witzigmann B (2021)
Publication Type: Conference contribution
Publication year: 2021
Publisher: IEEE Computer Society
Book Volume: 2021-September
Pages Range: 61-62
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Turin, ITA
ISBN: 9781665412766
DOI: 10.1109/NUSOD52207.2021.9541465
Abstract
Due to their small dimensions deep ultraviolet (DUV) light emitting diodes (LED) are highly attractive light sources for environmental and medical applications. DUV LEDs generate light in active quantum wells (QW) made of Aluminium Gallium Nitride. The QWs are not lattice matched to the substrate and only few monolayers thick making them susceptible to compound fluctuations seen through inhomogeneous broadening (IHB). In this work we analyze by means of self consistent carrier transport and luminescence simulations how the IHB affects the electronic operation and emission polarization of DUV LEDs. We demonstrate that the IHB affects both the internal quantum efficiency and the current versus voltage curve of DUV LEDs.
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Germany (DE)How to cite
APA:
Romer, F., & Witzigmann, B. (2021). Effect of Inhomogeneous Broadening in Deep Ultraviolet Light Emitting Diodes. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 61-62). Turin, ITA, IT: IEEE Computer Society.
MLA:
Romer, Friedhard, and Bernd Witzigmann. "Effect of Inhomogeneous Broadening in Deep Ultraviolet Light Emitting Diodes." Proceedings of the 2021 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2021, Turin, ITA IEEE Computer Society, 2021. 61-62.
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