Solomko V, Özdamar O, Weigel R, Hagelauer A (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 2
Pages Range: 375-384
Article Number: 9367280
DOI: 10.1109/OJAP.2021.3063528
A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.
APA:
Solomko, V., Özdamar, O., Weigel, R., & Hagelauer, A. (2021). Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors. IEEE Open Journal of Antennas and Propagation, 2, 375-384. https://dx.doi.org/10.1109/OJAP.2021.3063528
MLA:
Solomko, Valentyn, et al. "Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors." IEEE Open Journal of Antennas and Propagation 2 (2021): 375-384.
BibTeX: Download