Wagenpfeil M, Ziegler T, Schneider J, Fieguth A, Murra M, Schulte D, Althueser L, Huhmann C, Weinheimer C, Michel T, Anton G, Adhikari G, Al kharusi S, Angelico E, Arnquist IJ, Badhrees I, Bane J, Beck D, Belov V, Bhatta T, Bolotnikov A, Breur PA, Brodsky JP, Brown E, Brunner T, Caden E, Cao GF, Chambers C, Chana B, Charlebois SA, Chernyak D, Chiu M, Cleveland B, Craycraft A, Daniels T, Darroch L, Der mesrobian-Kabakian A, De A, Deslandes K, Devoe R, Di vacri ML, Dolinski MJ, Echevers J, Elbeltagi M, Fabris L, Fairbank D, Fairbank W, Farine J, Ferrara S, Feyzbakhsh S, Gallina G, Gautam P, Giacomini G, Gingras C, Goeldi D, Gorham A, Gornea R, Gratta G, Hansen EV, Hardy CA, Harouaka K, Heffner M, Hoppe EW, House A, Hughes M, Iverson A, Jamil A, Jewell M, Karelin A, Kaufman LJ, Krücken R, Kuchenkov A, Kumar KS, Lan Y, Larson A, Leach KG, Leonard DS, Li G, Li S, Li Z, Licciardi C, Lindsay R, Maclellan R, Martel-Dion P, Massacret N, Mcelroy T, Medina peregrina M, Mong B, Moore DC, Murray K, Nattress J, Natzke CR, Newby RJ, Nolet F, Nusair O, Nzobadila ondze JC, Odgers K, Odian A, Orrell JL, Ortega GS, Ostrovskiy I, Overman CT, Parent S, Piepke A, Pocar A, Pratte JF, Raguzin E, Ramonnye GJ, Rasiwala H, Rescia S, Reti re F, Richard C, Richman M, Ringuette J, Robinson A, Rossignol T, Rowson PC, Roy N, Saldanha R, Sangiorgio S, Soma AK, Spadoni F, Stekhanov V, Stiegler T, Tarka M, Thibado S, Tidball A, Todd J, Totev T, Triambak S, Tsang R, Vachon F, Veeraraghavan V, Viel S, Vivo-Vilches C, Walent M, Wichoski U, Worcester M, Wu SX, Xia Q, Yan W, Yang L, Zeldovich O (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 16
Article Number: P08002
Journal Issue: 8
DOI: 10.1088/1748-0221/16/08/P08002
Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45 angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36 % at an angle of incidence of 20 for the four samples and increases to up to 65 % at 70 for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.
APA:
Wagenpfeil, M., Ziegler, T., Schneider, J., Fieguth, A., Murra, M., Schulte, D.,... Zeldovich, O. (2021). Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon. Journal of Instrumentation, 16(8). https://doi.org/10.1088/1748-0221/16/08/P08002
MLA:
Wagenpfeil, Michael, et al. "Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon." Journal of Instrumentation 16.8 (2021).
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