Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors

Zhao B, Gothe B, Groh A, Schmaltz T, Will J, Steinrueck HG, Unruh T, Mecking S, Halik M (2021)


Publication Type: Journal article

Publication year: 2021

Journal

Book Volume: 13

Pages Range: 32461-32466

Journal Issue: 27

DOI: 10.1021/acsami.1c05764

Abstract

Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active it-conjugates in terms of orientation and layer thickness. In this work, we demonstrate self-assembled monolayer field-effect transistors (SAMFETs) composed of phosphonic acid oligomers of 3-hexylthiophene (oligothiophenes-OT) with systematic variations of thiophene repeating units (5, 10, and 20). The devices exhibit stable lateral charge transport with increased mobility as a function of thiophene unit counts. Importantly, our work reveals the packing and intermolecular order of varied-chain-length SAMs at the molecular scale via X-ray reflectivity (XRR) and quantitative X-ray photoelectron spectroscopy (XPS). Short oligomers (OT5-PA and OT10-PA) arrange almost perpendicular to the substrate, forming highly ordered SAMs, whereas the long-chain OT20-PA exhibits a folded structure. By tuning the molecular order in the monolayers via the SAM substitution reaction, the OT20-PA devices show a tripling in mobility.

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APA:

Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrueck, H.-G.,... Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials and Interfaces, 13(27), 32461-32466. https://doi.org/10.1021/acsami.1c05764

MLA:

Zhao, Baolin, et al. "Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors." ACS Applied Materials and Interfaces 13.27 (2021): 32461-32466.

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