Franz-Keldysh effect in Germanium p-i-n photodetectors on Silicon

Schmid M, Oehme M, Kaschel M, Werner J, Kasper E, Schulze J (2010)

Publication Type: Conference contribution

Publication year: 2010

Pages Range: 329-331

Conference Proceedings Title: IEEE International Conference on Group IV Photonics GFP

Event location: CHN

ISBN: 9781424463442

DOI: 10.1109/GROUP4.2010.5643337

Abstract

Ge on Si p-i-n photodetectors were grown by molecular beam epitaxy minimizing tensile strain. The slope of the absorption curve changes by a factor of 2 under varying voltages due to the clearly observable Franz-Keldysh-Effect. ©2010 IEEE.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Schmid, M., Oehme, M., Kaschel, M., Werner, J., Kasper, E., & Schulze, J. (2010). Franz-Keldysh effect in Germanium p-i-n photodetectors on Silicon. In IEEE International Conference on Group IV Photonics GFP (pp. 329-331). CHN.

MLA:

Schmid, M., et al. "Franz-Keldysh effect in Germanium p-i-n photodetectors on Silicon." Proceedings of the 2010 7th IEEE International Conference on Group IV Photonics, GFP 2010, CHN 2010. 329-331.

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