Room-temperature electroluminescence from tensile strained double-heterojunction Ge pin LEDs on Si substrates
Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J (2012)
Publication Type: Conference contribution
Publication year: 2012
Pages Range: 102-103
Conference Proceedings Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Event location: USA
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222478
Abstract
A series of double-heterojunction tensile strained Ge pin LEDs on Si substrates have been successfully grown and processed. The effect of the strain and the thickness of the intrinsic layer on the direct band gap is evaluated using electroluminescence measurements. © 2012 IEEE.
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Germany (DE)How to cite
APA:
Kaschel, M., Schmid, M., Gollhofer, M., Werner, J., Oehme, M., & Schulze, J. (2012). Room-temperature electroluminescence from tensile strained double-heterojunction Ge pin LEDs on Si substrates. In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 102-103). USA.
MLA:
Kaschel, Mathias, et al. "Room-temperature electroluminescence from tensile strained double-heterojunction Ge pin LEDs on Si substrates." Proceedings of the 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, USA 2012. 102-103.
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