Extraction of GeSn absorption coefficients from photodetector response
Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, Kasper E, Schulze J (2014)
Publication Type: Conference contribution
Publication year: 2014
Publisher: IEEE Computer Society
Pages Range: 137-138
Conference Proceedings Title: 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Event location: SGP
ISBN: 9781479954285
DOI: 10.1109/ISTDM.2014.6874643
Abstract
Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) [1]. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed. © 2014 IEEE.
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APA:
Ye, K., Zhang, W., Oehme, M., Schmid, M., Gollhofer, M., Kostecki, K.,... Schulze, J. (2014). Extraction of GeSn absorption coefficients from photodetector response. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 137-138). SGP: IEEE Computer Society.
MLA:
Ye, Kaiheng, et al. "Extraction of GeSn absorption coefficients from photodetector response." Proceedings of the 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, SGP IEEE Computer Society, 2014. 137-138.
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