Schwartz B, Klossek A, Kittler M, Oehme M, Kasper E, Schulze J (2014)
Publication Type: Journal article
Publication year: 2014
Book Volume: 11
Pages Range: 1686-1691
Journal Issue: 11-12
Antimony-doped Ge-LEDs were subjected to electroluminescence studies at temperatures about 300 K and 80 K. The LEDs were grown on Si substrates by MBE. The thickness of the active layer was 300 nm. For the p+nn+-LEDs the Sb concentrations were 1 × 1018, 1 × 1019, 3 × 1019, 4 × 1019, 7 × 1019 or 1 × 1020 cm-3, respectively. As reference a p+in+-LED without intentional doping in the active layer was used. The investigated specimen exhibited dominance of the direct transition line at about 0.8 eV. Moreover, luminescence indirect transition was observed. In general, the spectra reveal higher EL intensities at room temperature as compared to 80 K. With decreasing temperature the direct peak was blue shifted. The highest EL intensity was found for the LED with Sb concentration of 3 × 1019 cm-3. With increasing Sb doping a red-shift of the direct peak was observed, caused by band gap narrowing. In addition, a simulated curve of the direct transition was compared with our samples and fits well with the measured spectra.
APA:
Schwartz, B., Klossek, A., Kittler, M., Oehme, M., Kasper, E., & Schulze, J. (2014). Electroluminescence of germanium LEDs on silicon: Influence of antimony doping. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(11-12), 1686-1691. https://doi.org/10.1002/pssc.201400056
MLA:
Schwartz, Bernhard, et al. "Electroluminescence of germanium LEDs on silicon: Influence of antimony doping." Physica Status Solidi (C) Current Topics in Solid State Physics 11.11-12 (2014): 1686-1691.
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