Franz-Keldysh effect in GeSn detectors
Bechler S, Oehme M, Latzel O, Schmid M, Kostecki K, Koerner R, Gollhofer M, Kasper E, Schulze J (2014)
Publication Type: Conference contribution
Publication year: 2014
Journal
Publisher: Electrochemical Society Inc.
Book Volume: 64
Pages Range: 383-390
Conference Proceedings Title: ECS Transactions
Event location: Cancun
Abstract
Four different GeSn photodetectors with Sn content up to 5.6 % are investigated. From current-voltage measurements with and without illumination, the spectral optical responsivity is determined. With the responsivity and the measured reflection, the absorption and the direct band gap energies are calculated. All four samples show a voltage dependent change of the absorption due to the Franz-Keldysh effect. At a wavelength of 1950 nm, a maximum absorption ratio of 2 is observed for 4.2 % Sn for a voltage swing of 2.5 V.
Involved external institutions
Germany (DE)How to cite
APA:
Bechler, S., Oehme, M., Latzel, O., Schmid, M., Kostecki, K., Koerner, R.,... Schulze, J. (2014). Franz-Keldysh effect in GeSn detectors. In Benjamin Vincent, Atsushi Ogura, David Harame, Matty Caymax, Seiichi Miyazaki, Guofu Niu, Bernd Tillack, Bernd Tillack, Alexander Reznicek, Marc Heyns, Gianlorenzo Masini, Krishna Saraswat, Yee-Chia Yeo, Junich Murota (Eds.), ECS Transactions (pp. 383-390). Cancun, MX: Electrochemical Society Inc..
MLA:
Bechler, S., et al. "Franz-Keldysh effect in GeSn detectors." Proceedings of the 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun Ed. Benjamin Vincent, Atsushi Ogura, David Harame, Matty Caymax, Seiichi Miyazaki, Guofu Niu, Bernd Tillack, Bernd Tillack, Alexander Reznicek, Marc Heyns, Gianlorenzo Masini, Krishna Saraswat, Yee-Chia Yeo, Junich Murota, Electrochemical Society Inc., 2014. 383-390.
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