Franz-Keldysh effect in GeSn pin photodetectors
Oehme M, Kostecki K, Schmid M, Kaschel M, Gollhofer M, Ye K, Widmann D, Koerner R, Bechler S, Kasper E, Schulze J (2014)
Publication Type: Journal article
Publication year: 2014
Journal
Book Volume: 104
Article Number: 161115
Journal Issue: 16
DOI: 10.1063/1.4873935
Abstract
The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V. © 2014 AIP Publishing LLC.
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Germany (DE)How to cite
APA:
Oehme, M., Kostecki, K., Schmid, M., Kaschel, M., Gollhofer, M., Ye, K.,... Schulze, J. (2014). Franz-Keldysh effect in GeSn pin photodetectors. Applied Physics Letters, 104(16). https://dx.doi.org/10.1063/1.4873935
MLA:
Oehme, Michael, et al. "Franz-Keldysh effect in GeSn pin photodetectors." Applied Physics Letters 104.16 (2014).
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