Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes

Schmid M, Oehme M, Gollhofer M, Koerner R, Kaschel M, Kasper E, Schulze J (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Thin Solid Films Elsevier

Book Volume: 557

Pages Range: 351-354

DOI: 10.1016/j.tsf.2013.08.041

Abstract

The electroluminescence of vertically emitting Ge-on-Si light emitting diodes (LEDs) was investigated for tensile strain ranging from 0% to 0.24% and for heavy n-type doping ranging from 5 × 10¹⁷ cm^{- 3} to 1 × 10²⁰ cm^{- 3}. The tensile strain increased the electroluminescence of a Ge-on-Si pin LED by a factor of 2. For high n-type doping concentrations a distinct bandgap narrowing was observed and the electroluminescence at an optimal concentration of 3 × 10¹⁹ cm^{- 3} increased by a factor of 5.5 compared to an undoped Ge-on-Si pin LED. In a lateral design the electroluminescence spectrum of the 4 × 10¹⁹ cm^{- 3} n-type doped LED shows features of high intensity and narrow linewidth. © 2013 Elsevier B.V.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart

Germany (DE)

How to cite

APA:

Schmid, M., Oehme, M., Gollhofer, M., Koerner, R., Kaschel, M., Kasper, E., & Schulze, J. (2014). Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes. Thin Solid Films, 557, 351-354. https://doi.org/10.1016/j.tsf.2013.08.041

MLA:

Schmid, Marc, et al. "Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes." Thin Solid Films 557 (2014): 351-354.

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