The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si

Koerner R, Schwaiz D, Fischer IA, Augel L, Bechler S, Haenel L, Kern M, Oehme M, Rolseth E, Schwartz B, Weisshaupt D, Zhang W, Schulze J (2017)

Publication Type: Conference contribution

Publication year: 2017

Journal

Technical Digest - International Electron Devices Meeting Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 22.5.1-22.5.4

Conference Proceedings Title: Technical Digest - International Electron Devices Meeting, IEDM

Event location: San Francisco, CA US

ISBN: 9781509039012

DOI: 10.1109/IEDM.2016.7838474

Abstract

We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) - the Ge Zener-Emitter (ZE). The ZE is a device featuring light amplification up to 4.7 dB (92 mA) at center wavelength of 1700 nm and gain-bandwidth of 98 nm on Si (100). Our novel direct Zener band-to-band tunneling (BTBT) injection method enables low-voltage electron emission beyond the Boltzmann-limit (38 mV/dec at 1.55 K, 88 mV/dec at 300 K), achieving population-inversion at 0.45 V (41 mA). The ZE possesses a Si-Ge-Si hetero-structure with excellent CMOS integration compatibility by planar device design (550 nm) and an ultra-thin (100 nm) Ge virtual substrate (VS) on Si (100). Moreover, the ZE shows superior light emission properties with pulsed lasing at 1667 nm and superluminescent LED characteristic (150 cm-1 max. gain at 270 K, 100 cm-1 max. gain at 300 k). The developed ZE device presents a promising feature to monolithic Si-photonics filling the gap for energy-efficient light emission and amplification in a small footprint (1 mm) integrated waveguide-amplifier.

Involved external institutions

Universität Stuttgart DE Germany (DE) Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Koerner, R., Schwaiz, D., Fischer, I.A., Augel, L., Bechler, S., Haenel, L.,... Schulze, J. (2017). The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 22.5.1-22.5.4). San Francisco, CA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Koerner, R., et al. "The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si." Proceedings of the 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, CA Institute of Electrical and Electronics Engineers Inc., 2017. 22.5.1-22.5.4.

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